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FDS5690

N-Channel MOSFET

FDS5690 Features

* 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.

* Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications

FDS5690 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low i.

FDS5690 Datasheet (236.15 KB)

Preview of FDS5690 PDF

Datasheet Details

Part number:

FDS5690

Manufacturer:

Fairchild Semiconductor

File Size:

236.15 KB

Description:

N-channel mosfet.

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FDS5690 N-Channel MOSFET Fairchild Semiconductor

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