FDS5692Z N-Channel UltraFET Trench MOSFET

Fairchild Semiconductor

Description

FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General .
Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronou.

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Datasheet Specifications

Part number: FDS5692Z
Manufacturer: Fairchild Semiconductor
File Size: 115.61 KB
Datasheet: FDS5692Z-FairchildSemiconductor.pdf
Description: N-Channel UltraFET Trench MOSFET

Features

* This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
* Max rDS(on) = 24mΩ at V

Applications

* Low Qgd
* DC/DC converter
* Fast switching speed D D D D SO-8 G SS S 5 6 7 8 MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID Drain-Source Voltage Parameter Gate-Source Voltage Drain Current
* Continuous (Note 1a)
* Puls

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FDS5692Z N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

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