FDS9435A 30V P-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General.
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDS9435A
Manufacturer: Fairchild Semiconductor
File Size: 89.00 KB
Datasheet: FDS9435A_FairchildSemiconductor.pdf
Description: 30V P-Channel Power Trench MOSFET

Features

* -5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S F D 5A 3

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FDS9435A 30V P-Channel Power Trench MOSFET Fairchild Semiconductor

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