FDS9435A Datasheet - Fairchild Semiconductor

30V P-Channel Power Trench MOSFET

FDS9435A Features

* -5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S F D 5A 3

FDS9435A General Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

FDS9435A Datasheet (89.00 KB)

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FDS9435A

Manufacturer:

Fairchild Semiconductor

File Size:

89.00 KB

Description:

30v p-channel power trench mosfet.

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FDS9435A 30V P-Channel Power Trench MOSFET Fairchild Semiconductor

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FDS9435A Features

FDS9435A General Description

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