FDS9412 Datasheet - Fairchild Semiconductor

Single N-Channel Enhancement Mode Field Effect Transistor

FDS9412 Features

* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V

* Very low gate charge.

* High switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability in a widely used surface mount

FDS9412 General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as.

FDS9412 Datasheet (230.81 KB)

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Datasheet Details

Part number:

FDS9412

Manufacturer:

Fairchild Semiconductor

File Size:

230.81 KB

Description:

Single n-channel enhancement mode field effect transistor.

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FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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FDS9412 Features

FDS9412 General Description

Datasheet Details

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