FDS9412 Datasheet (Fairchild Semiconductor) - Single N-Channel Enhancement Mode Field Effect Transistor

FDS9412, Single N-Channel Enhancement Mode Field Effect Transistor

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are particularly suited for low voltage applications such as

FDS9412 Features

* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V

* Very low gate charge.

* High switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability in a widely used surface mount