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FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor

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Description

FDS9412 April 2000 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General .
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimi.

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Datasheet Specifications

Part number
FDS9412
Manufacturer
Fairchild Semiconductor
File Size
230.81 KB
Datasheet
FDS9412_FairchildSemiconductor.pdf
Description
Single N-Channel Enhancement Mode Field Effect Transistor

Features

* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V
* Very low gate charge.
* High switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a widely used surface mount

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