FDS9936A Datasheet - Fairchild Semiconductor

FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particula.

FDS9936A Features

* 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

FDS9936A_FairchildSemiconductor.pdf