FDS9936A Datasheet, Transistor, Fairchild Semiconductor

FDS9936A Features

• Transistor 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely

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FDS9936A

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Fairchild Semiconductor

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📄 Datasheet

Description:

Dual n-channel enhancement mode field effect transistor. SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te

FDS9936A Application

• Applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients a

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FDS9936A

Fairchild Semiconductor

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