FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Description

May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDS9936A
Manufacturer: Fairchild Semiconductor
File Size: 416.71 KB
Datasheet: FDS9936A_FairchildSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

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FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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