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FDS9953A Dual 30V P-Channel PowerTrench MOSFET

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Description

FDS9953A May 2001 FDS9953A Dual 30V P-Channel PowerTrench® MOSFET General .
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

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Datasheet Specifications

Part number
FDS9953A
Manufacturer
Fairchild Semiconductor
File Size
73.89 KB
Datasheet
FDS9953A_FairchildSemiconductor.pdf
Description
Dual 30V P-Channel PowerTrench MOSFET

Features

* 2.9 A,
* 30 V RDS(ON) = 130 mΩ @ V GS =
* 10 V RDS(ON) = 200 mΩ @ V GS =
* 4.5 V
* Low gate charge (2.5nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current h

Applications

* requiring a wide range of gave drive voltage ratings (4.5V

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