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FDV301N

N-Channel Digital FET

FDV301N Features

* 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one

FDV301N General Description

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applicati.

FDV301N Datasheet (200.99 KB)

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Datasheet Details

Part number:

FDV301N

Manufacturer:

Fairchild Semiconductor

File Size:

200.99 KB

Description:

N-channel digital fet.

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FDV301N N-Channel Digital FET Fairchild Semiconductor

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