FDV304P-F169 - P-Channel Digital FET
This P *Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on *state resistance at low gate drive conditions.
This device is designed especially for applica
FDV304P-F169 Features
* 25 V,
* 0.46 A Continuous,
* 1.5 A Peak
* RDS(on) = 1.1 W @ VGS =
* 4.5 V
* RDS(on) = 1.5 W @ VGS =
* 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V
* Gate
