Description
Digital FET, P-Channel FDV304P, FDV304P-F169 General .
This P.
Channel enhancement mode field effect transistors is
produced using onsemi’s proprietary, high cell density, DMOS technology.
Features
* 25 V,
* 0.46 A Continuous,
* 1.5 A Peak
* RDS(on) = 1.1 W @ VGS =
* 4.5 V
* RDS(on) = 1.5 W @ VGS =
* 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. VGS(th) < 1.5 V
* Gate
Applications
* such as notebook computers and cellular phones. This device has excellent on
