FDV303N N-Channel Digital FET

Fairchild Semiconductor

Description

FDV303N Digital FET, N-Channel General .
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDV303N
Manufacturer: Fairchild Semiconductor
File Size: 149.41 KB
Datasheet: FDV303N-FairchildSemiconductor.pdf
Description: N-Channel Digital FET

Features

* 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount pa

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