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FDV303N

N-Channel Digital FET

FDV303N Features

* 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model Compact industry standard SOT-23 surface mount pa

FDV303N General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in bat.

FDV303N Datasheet (149.41 KB)

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Datasheet Details

Part number:

FDV303N

Manufacturer:

Fairchild Semiconductor

File Size:

149.41 KB

Description:

N-channel digital fet.

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FDV303N N-Channel Digital FET Fairchild Semiconductor

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