FDV301N-F169 Datasheet, Fet, ON Semiconductor

FDV301N-F169 Features

• Fet
• 25 V, 0.22 A Continuous, 0.5 A Peak
• RDS(on) = 5 W @ VGS = 2.7 V
• RDS(on) = 4 W @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direc

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FDV301N-F169

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ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel digital fet. This N

Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density

FDV301N-F169 Application

• Applications as a replacement for digital transistors. Since bias resistors are not required, this one N
• channel FET can replace several dif

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FDV301N-F169

ON Semiconductor

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