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FDV301N-F169, FDV301N Datasheet - ON Semiconductor

FDV301N-F169 - N-Channel Digital FET

This N *Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

This device has been designed especially for low volt

FDV301N-F169 Features

* 25 V, 0.22 A Continuous, 0.5 A Peak

* RDS(on) = 5 W @ VGS = 2.7 V

* RDS(on) = 4 W @ VGS = 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V

* Replace Multiple NPN Digital Transistors with One DMOS FET

FDV301N-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FDV301N-F169, FDV301N. Please refer to the document for exact specifications by model.
FDV301N-F169 Datasheet Preview Page 2 FDV301N-F169 Datasheet Preview Page 3

Datasheet Details

Part number:

FDV301N-F169, FDV301N

Manufacturer:

ON Semiconductor ↗

File Size:

199.06 KB

Description:

N-channel digital fet.

Note:

This datasheet PDF includes multiple part numbers: FDV301N-F169, FDV301N.
Please refer to the document for exact specifications by model.

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