Datasheet4U Logo Datasheet4U.com

FDV301N-F169

N-Channel Digital FET

FDV301N-F169 Features

* 25 V, 0.22 A Continuous, 0.5 A Peak

* RDS(on) = 5 W @ VGS = 2.7 V

* RDS(on) = 4 W @ VGS = 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V

* Replace Multiple NPN Digital Transistors with One DMOS FET

FDV301N-F169 General Description

This N

*Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance. This device has been designed especially for low volt.

FDV301N-F169 Datasheet (199.06 KB)

Preview of FDV301N-F169 PDF

Datasheet Details

Part number:

FDV301N-F169

Manufacturer:

ON Semiconductor ↗

File Size:

199.06 KB

Description:

N-channel digital fet.

📁 Related Datasheet

FDV301N N-Channel Digital FET (Fairchild Semiconductor)

FDV301N N-Channel Digital FET (ON Semiconductor)

FDV301N N-Channel MOSFET (Kexin)

FDV302P P-Channel Digital FET (ON Semiconductor)

FDV302P Digital FET/ P-Channel (Fairchild Semiconductor)

FDV303N N-Channel Digital FET (Fairchild Semiconductor)

FDV303N N-Channel Digital FET (ON Semiconductor)

FDV303N N-Channel MOSFET (Kexin)

FDV304P Digital FET/ P-Channel (Fairchild Semiconductor)

FDV304P P-Channel Digital FET (ON Semiconductor)

TAGS

FDV301N-F169 N-Channel Digital FET ON Semiconductor

Image Gallery

FDV301N-F169 Datasheet Preview Page 2 FDV301N-F169 Datasheet Preview Page 3

FDV301N-F169 Distributor