Description
Digital FET, N-Channel FDV301N, FDV301N-F169 General .
This N.
Channel logic level enhancement mode field effect
transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
Features
* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. VGS(th) < 1.06 V
* Replace Multiple NPN Digital Transistors with One DMOS FET
Applications
* as a replacement for digital transistors. Since bias resistors are not required, this one N
