FDV301N-F169 - N-Channel Digital FET
This N *Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on *state resistance.
This device has been designed especially for low volt
FDV301N-F169 Features
* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
* Replace Multiple NPN Digital Transistors with One DMOS FET
