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FDV304P Datasheet - Fairchild Semiconductor

FDV304P - Digital FET/ P-Channel

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

This device is designed especially for application in batte

FDV304P Features

* -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface

FDV304P_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDV304P

Manufacturer:

Fairchild Semiconductor

File Size:

63.92 KB

Description:

Digital fet/ p-channel.

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