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FDW2512NZ

Dual N-Channel MOSFET

FDW2512NZ Features

* ! 6A, 20V rDS(ON) = 0.028Ω, VGS = 4.5V rDS(ON) = 0.036Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package General Description This N-Chan

FDW2512NZ General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDW2512NZ Datasheet (206.84 KB)

Preview of FDW2512NZ PDF

Datasheet Details

Part number:

FDW2512NZ

Manufacturer:

Fairchild Semiconductor

File Size:

206.84 KB

Description:

Dual n-channel mosfet.

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FDW2512NZ Dual N-Channel MOSFET Fairchild Semiconductor

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