FQD1N60 - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQD1N60
Manufacturer	Fairchild Semiconductor
File Size	543.80 KB
Description	600V N-Channel MOSFET
Datasheet	FQD1N60 Datasheet
Additional preview pages of the FQD1N60 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Apr 1, 2005 |