FQD1N80 - 800V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQD1N80 Features
* 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V Low gate charge ( typical 5.5nC) Low Crss ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso
