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FQD1N80 Datasheet - Fairchild Semiconductor

FQD1N80 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD1N80 Features

* 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V Low gate charge ( typical 5.5nC) Low Crss ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso

FQD1N80_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQD1N80

Manufacturer:

Fairchild Semiconductor

File Size:

635.94 KB

Description:

800v n-channel mosfet.

FQD1N80 Distributor

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FQD1N80 FQD1N80 800V N-Channel MOSFET Fairchild Semiconductor