Datasheet4U Logo Datasheet4U.com

FQD1N50B Datasheet - Fairchild Semiconductor

FQD1N50B - 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQD1N50B Features

* 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

FQD1N50B_FairchildSemiconductor.pdf

Preview of FQD1N50B PDF
FQD1N50B Datasheet Preview Page 2 FQD1N50B Datasheet Preview Page 3

Datasheet Details

Part number:

FQD1N50B

Manufacturer:

Fairchild Semiconductor

File Size:

606.69 KB

Description:

500v n-channel mosfet.

📁 Related Datasheet

📌 All Tags