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FQD1N50B

500V N-Channel MOSFET

FQD1N50B Features

* 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

FQD1N50B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD1N50B Datasheet (606.69 KB)

Preview of FQD1N50B PDF

Datasheet Details

Part number:

FQD1N50B

Manufacturer:

Fairchild Semiconductor

File Size:

606.69 KB

Description:

500v n-channel mosfet.

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FQD1N50B 500V N-Channel MOSFET Fairchild Semiconductor

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