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FQI12N50 500V N-Channel MOSFET

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Description

FQB12N50 / FQI12N50 QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number
FQI12N50
Manufacturer
Fairchild Semiconductor
File Size
617.23 KB
Datasheet
FQI12N50_FairchildSemiconductor.pdf
Description
500V N-Channel MOSFET

Features

* 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK FQB Series G D S I2-PAK FQI

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