FQI12N50 Datasheet (Fairchild Semiconductor)

FQI12N50, 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI12N50 Features

* 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G! G S D2-PAK FQB Series G D S I2-PAK FQI