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FQI44N10

100V N-Channel MOSFET

FQI44N10 Features

* 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " "

FQI44N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI44N10 Datasheet (640.10 KB)

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Datasheet Details

Part number:

FQI44N10

Manufacturer:

Fairchild Semiconductor

File Size:

640.10 KB

Description:

100v n-channel mosfet.

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FQI44N10 100V N-Channel MOSFET Fairchild Semiconductor

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