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FQI4N20L - 200V LOGIC N-Channel MOSFET

FQI4N20L Description

FQB4N20L / FQI4N20L December 2000 QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI4N20L Features

* 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from lo

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Datasheet Details

Part number
FQI4N20L
Manufacturer
Fairchild Semiconductor
File Size
517.30 KB
Datasheet
FQI4N20L_FairchildSemiconductor.pdf
Description
200V LOGIC N-Channel MOSFET

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200V LOGIC N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI4N20L-like datasheet

FQI4N20L Stock/Price