FQI4N20L 200V LOGIC N-Channel MOSFET

Fairchild Semiconductor

Description

FQB4N20L / FQI4N20L December 2000 QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI4N20L
Manufacturer: Fairchild Semiconductor
File Size: 517.30 KB
Datasheet: FQI4N20L_FairchildSemiconductor.pdf
Description: 200V LOGIC N-Channel MOSFET

Features

* 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from lo

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200V LOGIC N-Channel MOSFET Fairchild Semiconductor

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