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FQI4N80 - 800V N-Channel MOSFET

FQI4N80 Description

FQB4N80 / FQI4N80 September 2000 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI4N80 Features

* 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI4N80
Manufacturer
Fairchild Semiconductor
File Size
659.86 KB
Datasheet
FQI4N80_FairchildSemiconductor.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI4N80-like datasheet

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