FQI4N90 Datasheet - Fairchild Semiconductor

900V N-Channel MOSFET

FQI4N90 Features

* 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A

* Low Gate Charge (Typ. 24 nC)

* Low Crss (Typ. 9.5 pF)

* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

FQI4N90 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQI4N90 Datasheet (803.63 KB)

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Datasheet Details

Part number:

FQI4N90

Manufacturer:

Fairchild Semiconductor

File Size:

803.63 KB

Description:

900v n-channel mosfet.

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FQI4N90 900V N-Channel MOSFET Fairchild Semiconductor

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FQI4N90 Features

FQI4N90 General Description

Datasheet Details

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