FQI4N90 Datasheet, Mosfet, Fairchild Semiconductor

FQI4N90 Features

• Mosfet
• 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A
• Low Gate Charge (Typ. 24 nC)
• Low Crss (Typ. 9.5 pF)
• 100% Avalanche Tested D GDS

PDF File Details

Part number:

FQI4N90

Manufacturer:

Fairchild Semiconductor

File Size:

803.63kb

Download:

📄 Datasheet

Description:

900v n-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

TAGS

FQI4N90

Fairchild Semiconductor

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