FQI4N90 - 900V N-Channel MOSFET

Fairchild Semiconductor

The FQI4N90 by Fairchild Semiconductor is a 900V N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FQI4N90
Manufacturer	Fairchild Semiconductor
File Size	803.63 KB
Description	900V N-Channel MOSFET
Datasheet	FQI4N90_FairchildSemiconductor.pdf
Additional preview pages of the FQI4N90 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

4.2 A, 900 V, RDS(on) = 3.3 Ω (Max. ) @ VGS = 10 V, ID = 2.1 A.
Low Gate Charge (Typ. 24 nC).
Low Crss (Typ. 9.5 pF).
100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

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Published: Apr 1, 2005 |