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FQI4N60 Datasheet - Fairchild Semiconductor

FQI4N60 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI4N60 Features

* 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQI4N60_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQI4N60

Manufacturer:

Fairchild Semiconductor

File Size:

539.36 KB

Description:

600v n-channel mosfet.

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FQI4N60 FQI4N60 600V N-Channel MOSFET Fairchild Semiconductor

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