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FQI4P25 250V P-Channel MOSFET

FQI4P25 Description

FQB4P25 / FQI4P25 December 2000 QFET FQB4P25 / FQI4P25 250V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI4P25 Features

* -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G! G S !
* ▶ ▲
* S D2-PAK FQB Series G D S I2-PAK F

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Datasheet Details

Part number
FQI4P25
Manufacturer
Fairchild Semiconductor
File Size
579.24 KB
Datasheet
FQI4P25_FairchildSemiconductor.pdf
Description
250V P-Channel MOSFET

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250V P-Channel MOSFET Fairchild Semiconductor
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