Datasheet Details
Part number:
FQI6N45
Manufacturer:
Fairchild Semiconductor
File Size:
582.12 KB
Description:
450V N-Channel MOSFET
Features
* 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S
FQI6N45_FairchildSemiconductor.pdf
FQI6N45, 450V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQI6N45 Distributor
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