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FQI6N60

600V N-Channel MOSFET

FQI6N60 Features

* 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

FQI6N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI6N60 Datasheet (547.21 KB)

Preview of FQI6N60 PDF

Datasheet Details

Part number:

FQI6N60

Manufacturer:

Fairchild Semiconductor

File Size:

547.21 KB

Description:

600v n-channel mosfet.

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TAGS

FQI6N60 600V N-Channel MOSFET Fairchild Semiconductor

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