FQI6N90 Datasheet, Mosfet, Fairchild Semiconductor

FQI6N90 Features

• Mosfet
• 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanc

PDF File Details

Part number:

FQI6N90

Manufacturer:

Fairchild Semiconductor

File Size:

596.45kb

Download:

📄 Datasheet

Description:

900v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

FQI6N90

Fairchild Semiconductor

📁 Related Datasheet

FQI6N15 - 150V N-Channel MOSFET (Fairchild Semiconductor)

  
 

  
 
    
    
              .

FQI6N25 - 250V N-Channel MOSFET (Fairchild Semiconductor)

  
 

  
 
    
    
              .

FQI6N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQI6N40C - 400V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors ar.

FQI6N45 - 450V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N45 / FQI6N45 January 2001 QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

FQI6N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQI6N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N60 / FQI6N60 April 2000 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQI6N70 - 700V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQI6N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec.

FQI630 - 200V N-Channel MOSFET (Fairchild Semiconductor)

 

 
 

     QFET  & & & & & & '% ())* +
 , ) -Ω .* , /) * 0      1  .