FQI6N90 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI6N90
Manufacturer: Fairchild Semiconductor
File Size: 596.45 KB
Datasheet: FQI6N90_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

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FQI6N90 900V N-Channel MOSFET Fairchild Semiconductor

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