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FQI70N10

100V N-Channel MOSFET

FQI70N10 Features

* 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI70N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI70N10 Datasheet (645.40 KB)

Preview of FQI70N10 PDF

Datasheet Details

Part number:

FQI70N10

Manufacturer:

Fairchild Semiconductor

File Size:

645.40 KB

Description:

100v n-channel mosfet.

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FQI70N10 100V N-Channel MOSFET Fairchild Semiconductor

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