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FQI90N08 Datasheet - Fairchild Semiconductor

FQI90N08 - 80V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse

FQI90N08 Features

* 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI90N08_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQI90N08

Manufacturer:

Fairchild Semiconductor

File Size:

674.89 KB

Description:

80v n-channel mosfet.

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