FQI9N08 80V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB9N08 / FQI9N08 December 2000 QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FQI9N08 Datasheet Preview — Preview of FQI9N08 PDF

Datasheet Specifications

Part number: FQI9N08
Manufacturer: Fairchild Semiconductor
File Size: 547.11 KB
Datasheet: FQI9N08_FairchildSemiconductor.pdf
Description: 80V N-Channel MOSFET

Features

* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI9N08 Distributors

📁 Related Datasheet

FQI1N60 FQI27N25TU-F085 FQI4N60 FQI4N65 FQI5N60C FQI7N60

📌 All Tags

FQI9N08 80V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQI9N08-like datasheet