FQP2N60C Datasheet - Fairchild Semiconductor

FQP2N60C 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP2N60C Features

* 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A

* Low Gate Charge (Typ. 8.5 nC)

* Low Crss (Typ. 4.3 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-

FQP2N60C_FairchildSemiconductor.pdf