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FQP2N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 2 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 1 A.
  • Low Gate Charge (Typ. 8.5 nC).
  • Low Crss (Typ. 4.3 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-.

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Datasheet Details

Part number FQP2N60C
Manufacturer Fairchild Semiconductor
File Size 1.42 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQP2N60C Datasheet
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Full PDF Text Transcription

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FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.
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