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FQP2N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQP2N60C
Manufacturer: Fairchild Semiconductor
File Size: 1.42 MB
Datasheet: FQP2N60C_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

FQP2N60C Product details

Description

This N-Channel enhancement mode power.

Features

2 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 1 A.
Low Gate Charge (Typ. 8.5 nC).
Low Crss (Typ. 4.3 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-.

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600V N-Channel MOSFET Fairchild Semiconductor

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FQP2N60C Stock/Price