FQP2N90 Datasheet (Fairchild Semiconductor)

FQP2N90, 900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP2N90 Features

* 2.2 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 1.1 A

* Low Gate Charge (Typ. 12 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. ) 4 4 ) ; 4 ; !5 8