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FQP2N90 - 900V N-Channel MOSFET

FQP2N90 Description

FQP2N90 * N-Channel QFET® MOSFET FQP2N90 N-Channel QFET® MOSFET 900 V, 2.2 A, 7.2 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP2N90 Features

* 2.2 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 1.1 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.  ) 4 4 ) ; 4 ; !5 8

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP2N90-like datasheet

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