Datasheet Details
- Part number
- FQP2N90
- Manufacturer
- Fairchild Semiconductor
- File Size
- 1.17 MB
- Datasheet
- FQP2N90_FairchildSemiconductor.pdf
- Description
- 900V N-Channel MOSFET
FQP2N90 Description
FQP2N90 * N-Channel QFET® MOSFET FQP2N90 N-Channel QFET® MOSFET 900 V, 2.2 A, 7.2 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
FQP2N90 Features
* 2.2 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 1.1 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted. ) 4
4 ) ;
4
;
!5 8
📁 Related Datasheet
📌 All Tags
FQP2N90 Stock/Price