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FQP3N60C N-Channel MOSFET

FQP3N60C Description

FQP3N60C * N-Channel QFET® MOSFET December 2013 FQP3N60C N-Channel QFET® MOSFET 600 V, 3.0 A, 3.4 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP3N60C Features

* 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5.0 pF)
* 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Volt

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP3N60C-like datasheet