FQP5N50C Datasheet - Fairchild Semiconductor

FQP5N50C - 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP5N50C Features

* 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-220 FQP Series GD S TO-220F FQPF Serie

FQP5N50C_FairchildSemiconductor.pdf