Description
FQP9N90C / FQPF9N90C * N-Channel QFET® MOSFET FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
* 8 A, 900 V, RDS(on) = 1.4 Ω (Max. ) @ VGS = 10 V, ID = 4 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR E