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FQU2N60C Datasheet - Fairchild Semiconductor

FQU2N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQU2N60C Features

* 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK FQD Series I-PAK G D S FQU Seri

FQU2N60C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQU2N60C

Manufacturer:

Fairchild Semiconductor

File Size:

970.61 KB

Description:

600v n-channel mosfet.

FQU2N60C Distributor

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FQU2N60C FQU2N60C 600V N-Channel MOSFET Fairchild Semiconductor