FQU2N60C Datasheet (Fairchild Semiconductor)

FQU2N60C, 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQU2N60C Features

* 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D-PAK FQD Series I-PAK G D S FQU Seri