FQU6N50C Datasheet (Fairchild Semiconductor) - N-Channel enhancement mode power field effect transistors

FQU6N50C, N-Channel enhancement mode power field effect transistors

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQU6N50C Features

* 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss (typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D-PAK FQD Series I-PAK G D S FQU Series G!