FQU6N50C - N-Channel enhancement mode power field effect transistors

Fairchild Semiconductor

The FQU6N50C by Fairchild Semiconductor is a N-Channel enhancement mode power field effect transistors. Below is the official datasheet preview.

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FQU6N50C N-Channel enhancement mode power field effect transistors by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FQU6N50C** N-Channel enhancement mode power field effect transistors datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FQU6N50C
Manufacturer	Fairchild Semiconductor
File Size	687.07 KB
Description	N-Channel enhancement mode power field effect transistors
Datasheet	FQU6N50C_FairchildSemiconductor.pdf
Additional preview pages of the FQU6N50C datasheet.

FQU6N50C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss (typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Con.

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Published: Sep 26, 2005 |