HUF75337S3S Datasheet - Fairchild Semiconductor

HUF75337S3S N-Channel MOSFET

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for.

HUF75337S3S Features

* 75A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the web at: www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “G

HUF75337S3S_FairchildSemiconductor.pdf