HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm.
N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It wa
HUF75333S3 Features
* 66A, 55V
* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* Related Literature - TB334, “G
HUF75333G3-FairchildSemiconductor.pdf
Datasheet Details
HUF75333S3, HUF75333G3
Fairchild Semiconductor
277.91 KB
N-channel ultrafet power mosfets.
This datasheet PDF includes multiple part numbers: HUF75333S3, HUF75333G3.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
