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HUF75637S3S - N-Channel MOSFET

Datasheet Summary

Features

  • DRAIN (FLANGE).
  • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve HUF75637P3 HUF75637S3S Symbol D.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Datasheet preview – HUF75637S3S

Datasheet Details

Part number HUF75637S3S
Manufacturer Fairchild Semiconductor
File Size 201.65 KB
Description N-Channel MOSFET
Datasheet download datasheet HUF75637S3S Datasheet
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Full PDF Text Transcription

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HUF75637P3, HUF75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB Features DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve HUF75637P3 HUF75637S3S Symbol D • UIS Rating Curve Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75637P 75637S HUF75637P3 G S HUF75637S3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75637S3ST.
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