HUFA75321S3S Datasheet - Fairchild Semiconductor

HUFA75321S3S N-Channel MOSFET

HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in ap.

HUFA75321S3S Features

* 35A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “G

HUFA75321S3S Datasheet (234.06 KB)