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IRF550

Advanced Power MOSFET

IRF550 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220

IRF550 Datasheet (261.73 KB)

Preview of IRF550 PDF

Datasheet Details

Part number:

IRF550

Manufacturer:

Fairchild Semiconductor

File Size:

261.73 KB

Description:

Advanced power mosfet.

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TAGS

IRF550 Advanced Power MOSFET Fairchild Semiconductor

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