Datasheet4U Logo Datasheet4U.com

IRF550 - Advanced Power MOSFET

IRF550 Description

Advanced Power MOSFET .

IRF550 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220

📥 Download Datasheet

Preview of IRF550 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF550
Manufacturer
Fairchild Semiconductor
File Size
261.73 KB
Datasheet
IRF550_FairchildSemiconductor.pdf
Description
Advanced Power MOSFET

📁 Related Datasheet

  • IRF50N06 - N-Channel MOSFET (YZPST)
  • IRF510 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF510PBF - HEXFET POWER MOSFET (International Rectifier)
  • IRF510S - Power MOSFET (International Rectifier)
  • IRF511 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF512 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF513 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF520 - N-Channel Power MOSFET (STMicroelectronics)

📌 All Tags

Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF550-like datasheet

IRF550 Stock/Price