* 8A, 500V
* rDS(ON) = 0.850Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF840
Fairchild Semiconductor
93.27 KB
500v n-channel mosfet.
Data Sheet
January 2002
IRF840
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transisto.
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N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET
TYPE IRF840
s s s s s
V DSS 500 V
R DS(on) < 0.85 Ω
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These devices are n-channel, enhancement mode, power
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IRF840 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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N channel in a plastic TO220 package. They are intended for use in off.
IRF840 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(Advanced Power Electronics)
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RoHS-pliant Product
Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G
N-.
IRF840 - Power MOSFET
(Vishay)
.vishay.
IRF840
Vishay Siliconix
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D TO-220AB
S D G
G
S N-Channel MOSFET
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VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF840 - N-Channel Power MOSFET
(nELL)
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IRF840 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (8A, 500Volts)
DESCRIPTION
The Nell IRF840 are N-Channel enhan.
