IRF840 500V N-Channel MOSFET

Fairchild Semiconductor

Description

Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transisto.

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Datasheet Specifications

Part number: IRF840
Manufacturer: Fairchild Semiconductor
File Size: 93.27 KB
Datasheet: IRF840_FairchildSemiconductor.pdf
Description: 500V N-Channel MOSFET

Features

* 8A, 500V
* rDS(ON) = 0.850Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. Ordering Info

IRF840 Distributors

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IRF840 500V N-Channel MOSFET Fairchild Semiconductor

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