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IRF840 - 500V N-Channel MOSFET

IRF840 Description

Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transisto.

IRF840 Features

* 8A, 500V
* rDS(ON) = 0.850Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

IRF840 Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. Ordering Info

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Datasheet Details

Part number
IRF840
Manufacturer
Fairchild Semiconductor
File Size
93.27 KB
Datasheet
IRF840_FairchildSemiconductor.pdf
Description
500V N-Channel MOSFET

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500V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF840-like datasheet

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