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IRFI650B - 200V N-Channel MOSFET

IRFI650B Description

IRFW650B / IRFI650B November 2001 IRFW650B / IRFI650B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI650B Features

* 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI650B-like datasheet

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