IRFP350A Datasheet, Mosfet, Fairchild Semiconductor

IRFP350A Features

• Mosfet
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area

PDF File Details

Part number:

IRFP350A

Manufacturer:

Fairchild Semiconductor

File Size:

390.43kb

Download:

📄 Datasheet

Description:

Advanced power mosfet.

TAGS

IRFP350A

Fairchild Semiconductor

📁 Related Datasheet

IRFP350 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :.

IRFP350 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFP350 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFP350 - Power MOSFET (International Rectifier)
.

IRFP350 - N-Channel Power MOSFET (Intersil Corporation)
.. IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode sil.

IRFP350 - Power MOSFET (Vishay)
Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80 .

IRFP350A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance .

IRFP350FI - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP350FI FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vo.

IRFP350FI - N-Channel MOSFET (STMicroelectronics)
IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFP350FI Voss 400 V Ros(on) 0.30 10 10 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • H.

IRFP350LC - Power MOSFET (International Rectifier)
HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso.

IRFP350LC - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :.