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IRFW530A - Advanced Power MOSFET

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  • Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Ο I2-PAK Lower RDS(ON) : 0.092 Ω(Typ. ) 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain C.

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Datasheet Details

Part number IRFW530A
Manufacturer Fairchild Semiconductor
File Size 302.13 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRFW530A Datasheet
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ο I2-PAK Lower RDS(ON) : 0.092 Ω(Typ.) 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) * Ο Ο Ο Value 100 14 9.
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