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IRFW530A Advanced Power MOSFET

IRFW530A Description

Advanced Power MOSFET .

IRFW530A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Ο I2-P

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFW530A-like datasheet