IRFW530A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFW530A
Manufacturer	Fairchild Semiconductor
File Size	302.13 KB
Description	Advanced Power MOSFET
Datasheet	IRFW530A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Ο I2-PAK Lower RDS(ON) : 0.092 Ω(Typ. ) 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain C.

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Published: Jul 23, 2008 |