Datasheet4U Logo Datasheet4U.com

IRFWZ24 Power MOSFET

IRFWZ24 Description

Advanced Power MOSFET IRFWZ24 .

IRFWZ24 Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 175°C Operating Temperature
* Lower Leakage Current: 10µA (Max. ) @ VDS = 60V
* Lower RDS(ON):

📥 Download Datasheet

Preview of IRFWZ24 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFWZ24A - Power MOSFET (Samsung)
  • IRFWZ44A - Power MOSFET (Samsung)
  • IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFW610A - Power MOSFET (Samsung)
  • IRFW630A - Power MOSFET (Samsung)
  • IRFW630B - N-Channel MOSFET (ON Semiconductor)
  • IRFW720A - Power MOSFET (Samsung)
  • IRFW730A - Power MOSFET (Samsung)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFWZ24-like datasheet