IRFWZ24 Datasheet, Mosfet, Fairchild Semiconductor

IRFWZ24 Features

• Mosfet
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area

PDF File Details

Part number:

IRFWZ24

Manufacturer:

Fairchild Semiconductor

File Size:

219.94kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

IRFWZ24

Fairchild Semiconductor

📁 Related Datasheet

IRFWZ24A - Power MOSFET (Samsung)
Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.

IRFWZ14 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFWZ14 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFWZ14A - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFW/IZ14A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.

IRFWZ34 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFWZ34 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFWZ34A - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFW/IZ34A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.

IRFWZ44 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFWZ44 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFWZ44A - Power MOSFET (Samsung)

     

 )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.

IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Volt.

IRFW520A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω .

IRFW530A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω.