IRFWZ44
Fairchild Semiconductor
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Power mosfet.
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IRFWZ44A - Power MOSFET
(Samsung)
)($785(6
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IRFWZ14 - Power MOSFET
(Fairchild Semiconductor)
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IRFWZ14
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFWZ14A - Power MOSFET
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IRFW/IZ14A
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.
IRFWZ24 - Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
IRFWZ24
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFWZ24A - Power MOSFET
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Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.
IRFWZ34 - Power MOSFET
(Fairchild Semiconductor)
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IRFWZ34
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFWZ34A - Power MOSFET
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.
IRFW450 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFW450
FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Volt.
IRFW520A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
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Avalanche Rugged Technology Rugged Gate Oxide Technology
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IRFW/I520A
BVDSS = 100 V RDS(on) = 0.2 Ω .
IRFW530A - Advanced Power MOSFET
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BVDSS = 100 V RDS(on) = 0.11 Ω.
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