Datasheet4U Logo Datasheet4U.com

IRFWZ24A, IRFIZ24A Datasheet - Samsung

IRFWZ24A Power MOSFET

IRFWZ24A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR

IRFIZ24A-Samsung.pdf

This datasheet PDF includes multiple part numbers: IRFWZ24A, IRFIZ24A. Please refer to the document for exact specifications by model.
IRFWZ24A Datasheet Preview Page 2 IRFWZ24A Datasheet Preview Page 3

Datasheet Details

Part number:

IRFWZ24A, IRFIZ24A

Manufacturer:

Samsung

File Size:

208.25 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFWZ24A, IRFIZ24A.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFWZ24 Power MOSFET (Fairchild Semiconductor)

IRFWZ14 Power MOSFET (Fairchild Semiconductor)

IRFWZ14A Power MOSFET (Fairchild Semiconductor)

IRFWZ34 Power MOSFET (Fairchild Semiconductor)

IRFWZ34A Power MOSFET (Fairchild Semiconductor)

IRFWZ44 Power MOSFET (Fairchild Semiconductor)

IRFWZ44A Power MOSFET (Samsung)

IRFW450 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IRFWZ24A IRFIZ24A Power MOSFET Samsung

IRFWZ24A Distributor