Datasheet Details
Part number:
IRFWZ24A, IRFIZ24A
Manufacturer:
Samsung
File Size:
208.25 KB
Description:
Power MOSFET
Note:
This datasheet PDF includes multiple part numbers: IRFWZ24A, IRFIZ24A.
Please refer to the document for exact specifications by model.
Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EARIRFWZ24A Distributors
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