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IRFWZ24A

Power MOSFET

IRFWZ24A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR

IRFWZ24A Datasheet (208.25 KB)

Preview of IRFWZ24A PDF

Datasheet Details

Part number:

IRFWZ24A

Manufacturer:

Samsung

File Size:

208.25 KB

Description:

Power mosfet.

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TAGS

IRFWZ24A Power MOSFET Samsung

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