ISL9N2357D3ST N-Channel Power MOSFET

Fairchild Semiconductor

Description

ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET® Trench Power MOSFET UltraFET® Trench from Fairchild is a new advanced MOS.

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Datasheet Specifications

Part number: ISL9N2357D3ST
Manufacturer: Fairchild Semiconductor
File Size: 260.35 KB
Datasheet: ISL9N2357D3ST_FairchildSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* rDS(ON) = 0.006Ω Typical, VGS = 10V
* Qg Total 85nC Typical, VGS = 10V
* Qgd 16nC Typical
* CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol D G GATE SOURCE S Ordering Information PART NUMBER ISL9N2357D3ST PACKAGE TO-252AA BRAND

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ISL9N2357D3ST N-Channel Power MOSFET Fairchild Semiconductor

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