* rDS(ON) = 0.006Ω Typical, VGS = 10V
* Qg Total 85nC Typical, VGS = 10V
* Qgd 16nC Typical
* CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol D G GATE SOURCE S Ordering Information PART NUMBER ISL9N2357D3ST PACKAGE TO-252AA BRAND
ISL9N2357D3ST Datasheet (260.35 KB)
ISL9N2357D3ST
Fairchild Semiconductor
260.35 KB
N-channel power mosfet.
ISL9N2357D3ST
Data Sheet June 2002
30V, 0.007 Ohm, 35A, N-Channel UltraFET® Trench Power MOSFET
UltraFET® Trench from Fairchild is a new advanced MOS.
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