KSB1366
Fairchild Semiconductor
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Pnp transistor.
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KSB1366 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC.
KSB13003A - NPN Silicon Power Transistor
(SemiHow)
KSX13003A Series
KSB13003A / KSG13003A KSC13003A / KSH13003A
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A
General Description
• Hi.
KSB13003C - NPN Silicon Power Transistor
(SemiHow)
KSX13003C Series
KSB13003C KSU13003C
NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
General Description
• High voltage, High speed p.
KSB13003E - NPN Silicon Power Transistor
(SemiHow)
KSX13003E Series
KSB13003E KSU13003E / KSD13003E
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A
General Description
• High Voltage, .
KSB13003H - NPN Silicon Power Transistor
(SemiHow)
KSX13003H Series
KSB13003H KSC13003H / KSU13003H
NPN Silicon Power Transistor, VCBO= 900V, VCEO= 530V, IC= 1.5A
General Description
• High voltage, .
KSB13005A - NPN Silicon Power Transistor
(SemiHow)
KSX13005A Series
KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A
General D.
KSB1015 - PNP Epitaxial Silicon Transistor
(Fairchild Semiconductor)
KSB1015
KSB1015
Low Frequency Power Amplifier
• Low Collector Emitter Saturation Voltage • Complement to KSD1406
1
TO-220F 2.Collector 3.Emitter
1.
KSB1015 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
KSB1015
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp.
KSB1017 - PNP Silicon Epitaxial Transistor
(Fairchild Semiconductor)
KSB1017
KSB1017
Power Amplifier Applications
• Complement to KSD1408
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Abs.
KSB1017 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
KSB1017
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl.