KSB1017 Datasheet - Fairchild Semiconductor

KSB1017 PNP Silicon Epitaxial Transistor

KSB1017 KSB1017 Power Amplifier Applications Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 25 150 - 55 ~ 150 Units V V V A.

KSB1017_FairchildSemiconductor.pdf